Dislocation Formation in Epitaxial film by Propagation of Shallow Dislocations on 4H-SiC substrate

摘要

Shallow defects, which were induced by mechanical treatment, on 4H-SiC wafers were investigated. The density and the depth distribution of shallow defects on the wafers were dependent on wafer manufacturer. Most of the serious defects, such as the dislocation array (DA), triangular stacking fault (TRSF), and triangular defect (TRD), in epitaxial film were demonstrated to be caused by shallow dislocations on the surface of the wafers. Revised mechanical polishing can reduce the DA, TRSF, and TRD densities in epitaxial film.