High quality mid-infrared InAs film grown on (100) GaSb substrate by LPE using a ternary melt

摘要

InAs film has been successfully grown on (100) GaSb substrate using a ternary In-As-Sb melt by liquid phase epitaxy (LPE). The high resolution X-ray diffraction (HRXRD) and Rocking curve showed the film was single crystalline InAs with high quality. The Fourier transform infrared (FTIR) transmission spectrum revealed that the cutoff wavelength was about 3.8 μm at room temperature. The electron mobility at 300 K is higher than 2×10~4 cm~2/Vs. It indicates that the structure of InAs/GaSb prepared by LPE has a potential for mid-infrared devices.