InAs_(0.3)Sb_(0.7) films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

摘要

The growth of InAs_xSb_(1-x) films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs_(0.3)Sb_(0.7) films with InAs_(0.91)Sb_(0.09) buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs_(0.3)Sb_(0.7) layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10~4cm~2 V~(-1) s~(-1) and the carrier density is 2.78 x 10~(16)cm~(-3) at room temperature (RT). The InAs_(0.3)Sb_(0.7) films grown on (100) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 μm.