Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations

摘要

We developed a procedure and software allowing us to predict and understand device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into a device simulator. We demonstrate the incorporation of the quantified SSRM 2D-profiles into a device simulator using data collected on p-MOSFETs. Based on these profiles the simulator now predicts the electrical characteristics of the device in excellent agreement with the experimental device results, whereas calculations based on (advanced calibration) process simulations showed significant discrepancies. With this approach the difficult and time consuming calibration step of the process simulation can be circumvented and device results can be interpreted directly based on the details of the real 2D-carrier profiles.