Scanning Spreading Resistance Microscopy for the Characterization of Advanced Silicon Devices

摘要

4Table of contentsList of abbreviations …………………………………………….………. 41. Introduction………………………………………………………………71.1. Scaling trends in microelectronics……………………….........71.2. Need for 2D doping profiling………………………………….81.3. 2D doping profiling techniques………………..……………..91.3.1. 2D techniques based on a one-dimensionaltechnique…………………………………………..101.3.2. Electron Microscopy techniques………………...…111.3.3. Scanning-probe microscopy basedtechniques…………………………………………...…….121.4. Scope of this work………...…………………………………..192. Sample preparation………………………..……………………………202.1. Cross-section……………………..……………………………212.1.1. Cleavage………..…………………………………….212.1.2. Polishing………………..……………………………242.1.3. Colloidal silica………..……………………………..262.1.4. Sputtering techniques……………..………………..282.1.5. KOH etching……………..………………………….302.2. Influence of the native oxide…………………..……………..332.3. Back contact………………………………………..…………422.4. Conclusions…………………………………………..……….443. Resolution issues……………………………………….………………453.1. Lateral resolution……………………….…………………….453.2. Interaction volume……………………….………….………..473.3. Sensitivity……………………………….………….………….513.4. Factors affecting resolution in SSRM……….….……………543.4.1. Mechanical contact………………..……………..543.4.2. ß-Sn phase……………………………………..…….573.4.3. Surface roughness…………….…………………….643.4.4. Quantification……………………………………….663.5. Conclusions……………………………………………….…..694. Probes………………………………………………..………………….714.1. Introduction…………………………………………….……..714.2. Probe requirements for SSRM………………….……………714.3. Comparison of the spatial resolution in SOI test samples.…744.4. Optimization of full diamond tips………………………….804.5. Conclusions…………………………….………..…………..885. Application to silicon nanodevices……………..…….………………..905.1. Introduction…………………………………….……………..905.2. Silicon-on-insulator………………………..………………….905.3. Vertical transistors……………………….…………………..1025.4. finFETs………………………………………………………1116. Conclusions and futurework………………………………………….120References………………………………………………………………...125Scientific contributions…………………………………………………..133