High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology

摘要

We propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with low temperature sensitivity. It is achieved by inserting in the same LDMOS device P+ diffusions in the drain with various N+/P+ ratios whose impact on RON and holding current at high temperatures is thoroughly studied.