Textured Surface Hydrogenated Gallium-doped ZnO-TCOs for Si-based Thin Film Solar Cells Grown via Magnetron Sputtering at Room Temperature

摘要

Hydrogenated Ga-doped ZnO (ZnO:Ga/H, GZO/H) transparent conductive oxides (TCOs) thin filmsare deposited on glass substrates via pulsed direct-current (DC) magnetron sputtering at room temperature. Theinfluences of H2 flow rates ranged from 0 sccm to 12 sccm on the micro-structural, electrical, and optical propertiesof GZO/H TCO thin films are investigated. The GZO/H thin films show rather lower resistivity with relatively highercarrier concentration and electron mobility, and also present higher transmittance in visible range (～400-600 nm)than the GZO thin films. These GZO/H thin films exhibit high transparencies of ～80-95% for wide spectral region (~380-1000 nm). The optimized GZO/H thin film obtained at 6 sccm exhibits the lowest resistivity 6.8×10~(-4) Ωcm witha high electron mobility of 34.2 cm~2/Vs. These GZO/H thin films are also developed for rough textured surface withpost wet-etching process in diluted hydrochloric acid. The formation model for textured surface GZO/H thin films isintroduced.