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A TIA-based readout circuit with temperature compensation for MEMS capacitive gyroscope

机译:基于TIA的具有温度补偿的MEMS电容陀螺仪读出电路

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This paper presents an integrated readout circuit based on trans-impedance amplifier (TIA) for MEMS capacitive gyroscope. The feedback resistors in TIA are realized in T-network pattern, which provides on-chip trans-impedance gains up to 22MΩ. A CMOS temperature-variable gain circuit is proposed to compensate the temperature induced sensitivity variance in MEMS and TIA. The demodulator, instrumental amplifier and low-pass filter for signal processing are also integrated on chip. In order to simulate the response of the circuit to the vibrating gyroscope, a gyroscope simulation model implemented in Verilog-A HDL is established, which can take the MEMS parameters influence into account. The circuits measure 0.8×1.7mm2 in a standard 0.35µm CMOS process. The simulation results show that the TIA achieves a capacitive resolution of 0.42aF/−Hz at 2.5kHz with 75ppm/°C temperature coefficient from a single 5V supply.
机译:本文提出了一种基于跨阻放大器(TIA)的MEMS电容陀螺仪集成读出电路。 TIA中的反馈电阻以T网络模式实现,可提供高达22MΩ的片上互阻增益。提出了一种CMOS温度可变增益电路来补偿MEMS和TIA中温度引起的灵敏度变化。解调器,仪表放大器和用于信号处理的低通滤波器也集成在芯片上。为了模拟电路对振动陀螺仪的响应,建立了在Verilog-A HDL中实现的陀螺仪仿真模型,该模型可以考虑MEMS参数的影响。在标准的0.35µm CMOS工艺中,这些电路的尺寸为0.8×1.7mm 2 。仿真结果表明,TIA在单个5V电源下在2.5kHz时具有75ppm /°C的温度系数,可实现0.42aF / -Hz的电容分辨率。

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