High temperature physical modeling and verification of 4H-SiC lateral JFET device

摘要

Silicon Carbide (SiC) lateral JFET (LJFET) has drawn significant attentions due to its excellent performance in high-temperature and high-frequency electronics applications. This paper establishes a comprehensive physical model, including both DC and AC characteristics, for 4H-SiC lateral JFET at room temperature and high temperature (300°C). Finite element numerical simulation and experimental measurement are carried out to verify the validity of the established physical model. Good agreements have been achieved among these three sets of results. For the first time, the modeling work studied the detailed operating mechanism and provided valuable design guidelines for SiC LJFET device at temperature as high as 300°C.