High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure

摘要

This paper studies the unique behavior of a novel 4H-SiC LJFET structure, featuring the series-connection of a normally-on lateral channel with normally-off vertical channels. A comprehensive physical model is established for the novel structure to explain its different static and dynamic characteristics than the conventional LJFET structure, both at room temperature and high temperature (300 ℃). Finite element numerical simulation and experimental measurement are carried out to verify the validity of the established physical model. Good agreements have been achieved among these three sets of results. For the first time, the modeling work studied the detailed operating mechanism and provided valuable design guidelines for SiC LJFET device at temperature as high as 300 ℃.