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Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC

机译:面向移动SoC和3D-IC的嵌入式存储器和电阻RAM(RRAM)中的电路设计挑战

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Mobile systems require high-performance and low-power SoC or 3D-IC chips to perform complex operations, ensure a small form-factor and ensure a long battery life time. A low supply voltage (VDD) is frequently utilized to suppress dynamic power consumption, standby current, and thermal effects in SoC and 3D-IC. Furthermore, lowering the VDD reduces the voltage stress of the devices and slows the aging of chips. However, a low VDD for embedded memories can cause functional failure and low yield. This paper reviews various challenges in the design of low-voltage circuits for embedded memory (SRAM and ROM). It also discusses emerging embedded memory solutions. Alternative memory interfaces and architectures for mobile SoC and 3D-IC are also explored.
机译:移动系统需要高性能和低功耗SoC或3D-IC芯片来执行复杂的操作,确保小尺寸并确保较长的电池寿命。低电源电压(VDD)通常用于抑制SoC和3D-IC中的动态功耗,待机电流和热效应。此外,降低VDD可以降低器件的电压应力并减缓芯片的老化。但是,嵌入式存储器的VDD低会导致功能故障和良率降低。本文回顾了嵌入式存储器(SRAM和ROM)低压电路设计中的各种挑战。它还讨论了新兴的嵌入式内存解决方案。还探讨了用于移动SoC和3D-IC的替代存储器接口和体系结构。

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