Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments

摘要

The latest enhancements to NanoTCAD mixed-mode software package, combining 3D physics-based nano-scale device models and unique mixed-mode interface to the Cadence Spectre circuit simulator, have enabled simulations and in-operation analysis of ionizing radiation single event effects (SEEs) in modern high-speed SiGe BiCMOS technologies and integrated circuits. Additionally, the NanoTCAD new, automated interface to Geant4 radiation models and the 3D solver capability to model very low temperature behavior, enable a comprehensive and accurate modeling of radiation effects in nano-scale systems, in the extreme radiation and temperature environments of space. Example simulations of SEEs affecting digital output of a 7.2GHz mixed-signal circuit are presented. Our mixed-mode modeling results compare very well with experimental data.