首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Preparation and optical properties of epitaxial Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3 - PbTiO{sub}3 thin film on Si substrates with buffer layer using pulsed laser deposition
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Preparation and optical properties of epitaxial Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3 - PbTiO{sub}3 thin film on Si substrates with buffer layer using pulsed laser deposition

机译:外延Pb的制备和光学性质(Mg {sub}(1/3)Nb {sub}(2/3))O {sub} 3 - Pbtio {sub} 3使用脉冲激光沉积的缓冲层的Si基板上的薄膜

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Epitaxial Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3-PbTiO{sub}3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO{sub}3/SrTiO{sub}3/(La,Sr)CoO{sub}3/CeO{sub}2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.
机译:外延PB(Mg {sub}(1/3)Nb {sub}(2/3))O {sub} 3-pbtio {sub} 3(PMN-Pt)用于电光应用的薄膜在Si衬底上制造缓冲层。通过脉冲激光沉积制造PMN-PT / SRRUO {SUB} 3 / SRTIO {SUB} 3 /(LA,SR)COO {SUB} 3 / CEO {SUB} 2 / YSZ / SI hetrostructure。成功沉积厚度为2μm的PMN-PT薄膜。 PMN-PT外延膜的光学特性通过棱镜耦合法测量。通过在沉积期间在靶和基板之间引入掩模来急剧改善PMN-Pt膜的形态。 PMN-PT薄膜显示柱状结构,其中每塔的宽度约为180nm。使用PRISM耦合器方法,为外延PMN-PT薄膜获得零偏置电压为2.48的折射率。

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