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机译:衬底温度对脉冲激光沉积生长的0.5Pb(Ni_(1/3)Nb_(2/3))O_3-0.35PbTiO_3-0.15PbZrO_3薄膜的生长和电性能的影响
Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India;
Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India;
Relaxor ferroelectric materials; Thin films; Dielectric properties; Ferroelectric properties;
机译:生长温度和膜厚对脉冲激光沉积在铂硅衬底上生长的Ba_(0.7)Sr_(0.3)TiO_3薄膜的电性能的影响
机译:脉冲激光沉积在缓冲硅衬底上生长的外延0.65Pb(Mg_(1/3)Nb_(2/3))O_3-0.35PbTiO_3薄膜的电性能
机译:脉冲激光沉积法在Pt / TiO_2 / SiO_2 / Si衬底上25%Bi(Ni_(1/2)Ti_(1/2))O_3-75%PbTiO_3薄膜的生长和电性能
机译:脉冲激光沉积在各种单晶衬底上生长的无铅铁电Na0.5Bi0.5TiO3薄膜的外延生长和性能
机译:通过脉冲激光沉积和溶胶-凝胶法控制氧化锌薄膜的电阻率和光学性质。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:脉冲激光沉积生长氧化铋薄膜底物温度的影响