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Lowest cost of ownership for chip to wafer bonding with the advanced chip to wafer bonding process flow

机译:先进的芯片到晶圆键合工艺流程,芯片到晶圆键合的拥有成本最低

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The shrinkage and the integration of various functionalities into electrical devices, like computers or mobile phones, lead to an ongoing need for shrinkage of the integrated semiconductor units. One possibility for manufacturing of highly integrated electrical devices is the system in package (SiP) approach where various semiconductor chips with different functionalities are stacked and electrically connected to each other. The shrinkage affects all levels of the SiP, e.g. the transistor size, the die thickness, the height of the die stack and also the dimension and shape of interconnects between the dies. The shrinkage of the die thickness and the interconnects can cause difficulties of the existing widely used joint technologies, e.g. solder bumping, because of low amount of involved solder, so that the assembly yields drops and the reliability of the interconnects lowers. The advanced chip to wafer (AC2W) bonding is a two step process for stacking and bonding dies on wafers. First all dies are aligned and tacked on the wafer and in the second step all dies are bonded simultaneously permanently to the wafer. This process allows having force while bonding the dies on the wafer. In that way low solder volume interconnects can be formed on a wafer level with high assembly yield and throughput. The cost of ownership (CoO) connected with the throughput of the AC2W process can be an order of magnitude smaller then for comparable chip to wafer bonding processes and therefore the AC2W offers a low cost chip to wafer bonding process for high volume production. This paper will show the AC2W bonding process in detail, some issues at die joint shrinkage, a comprehensive throughput and CoO comparison between the AC2W and comparable process flows and the usage of the AC2W for multiple die layer stacking.
机译:缩小功能以及将各种功能集成到诸如计算机或移动电话之类的电子设备中,导致对集成半导体单元的缩小的持续需求。制造高度集成的电气设备的一种可能性是系统级封装(SiP)方法,其中堆叠具有不同功能的各种半导体芯片并将它们彼此电连接。收缩会影响SiP的所有水平,例如晶体管尺寸,管芯厚度,管芯堆叠的高度以及管芯之间互连的尺寸和形状。管芯厚度和互连的收缩会引起现有广泛使用的接合技术的困难,例如由于所含焊料量少,焊料隆起,因此组件的成品率下降,互连的可靠性降低。先进的芯片到晶圆(AC2W)接合是用于在晶片上堆叠和接合管芯的两步过程。首先,将所有管芯对准并钉在晶片上,然后在第二步中,将所有管芯同时永久地粘结到晶片上。该过程允许在将管芯键合到晶片上的同时施加力。这样,可以在晶片级上以高组装良率和高产量形成低焊料量的互连。与可比的芯片到晶圆键合工艺相比,与AC2W工艺的吞吐量相关的拥有成本(CoO)可以小一个数量级,因此AC2W提供了低成本的芯片到晶圆键合工艺,可进行大批量生产。本文将详细展示AC2W的键合工艺,管芯接头收缩的一些问题,AC2W与可比较的工艺流程之间的综合生产能力和CoO比较,以及将AC2W用于多个管芯层堆叠的情况。

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