MOCVD GROWTH OF ZNO FILM AND ITS APPLICATION AS FRONT ELECTRODE IN HIGH-EFFICIENCY 'MICROMORPH' THIN-FILM SILICON TANDEM SOLAR CELLS

摘要

Doped zinc oxide is one of the most attractive materials in electrode application of thin-film siliconphotovoltics for its optically transparent, electrically conductive and morphologically textured for effective lighttrapping. Metal organic chemical vapor deposition process (MOCVD) can produce a naturally textured zinc oxidefilms, so it is one of the most often used methods to prepare rough ZnO films. This paper will report on anexperimental investigation on time dependence of electric properties, light transparency, surface morphology andcrystalline preferential orientation of MOCVD-ZnO films. Such films had been used as front electrode of‘micromorph’ thin-film silicon tandem solar cells prepared by PECVD method. Photoelectric conversion efficiencyof 8.43% under illumination of AM1.5 was obtained with cell area of 0.25 cm~2.