The emergence of aluminium implant technology ('i2') at Dynex Semiconductor for the manufacture of power bipolar semiconductor devices has been well documented. This paper addresses a variety of applications benefits to be gained by use of this technology. In particular,meeting the demand for increasing HVDC switching power, improved converter diode manufacturability, very high voltage/current capability for pulse power, and efficient parameter matching for large area thyristor parallel sharing are discussed. Bonding devices and 150mm-wafer suited to provide state of art power devices well into the foreseeable future.
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