Simulation of Multilayer Silicon Thin Films Growth on Si (111) Surface

摘要

The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier E_B = 0.1 ～ 0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.