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Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

机译:ECR氢等离子体对硅衬底的表面清洁作用对随后的同质外延生长的影响

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We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.
机译:我们已经证明了在使用和不使用电子回旋共振氢等离子体对硅衬底表面进行原位清洁的情况下,分别制备了几乎无缺陷的同质外延层和缺陷层。二次离子质谱表明,随着原位清洗,界面氧和碳浓度分别降低和升高。我们通过评估随后沉积的硅同质外延膜的横截面透射电子显微镜图像,研究了诸如微波功率,直流偏置和清洁时间等工艺参数对外延生长的影响。

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