PROPERTIES OF a-SiC:H FILMS DEPOSITED BY LARGE AREA PECVD SYSTEM

摘要

Hydrogenated amorphous silicon carbon films were deposited by a large area PECVD system from helium diluted mixtures of silane ― methane in low power regime. Films properties were studied varying the methane fraction and discharge parameters. Large area films, prepared with different methane fraction show the same optical, electrical and structural characteristics of those grown in a conventional PECVD system. The effects of the discharge parameters were ascribed to the variation of carbon content in the film. The analyses lead to determine the growth conditions to produce a-SiC:H material with good photosensitivty for large area PV devices.