The Study of Dielectric Constant Change of a-SiC:H Films Deposited by Remote PECVD with Low Deposition Temperatures

摘要

a-SiOC:H films were deposited by using a remote Plasma Enhanced Chemical Vapor Deposition (PECVD) system with HMDS (Hexamethyldisilane) as a precursor. The H_2ggH2as and thae Cs were used as carrier gas and dilution gas, respectively. The flow rate of C_ gH2as was fixed at 3 scm. The deposition temperature was varied between 100° to 200° to study the effect of temperature on the film stoichiometry and bonding properties, which can affect changes in the dielectric constant of the deposited films. A Rapid Thermal Annealing (RTA) treatment was conducted to determine the thermal stability and any changes in the dielectric constant. A change in carbon hybridization bonds caused by different deposition temperatures played an important role in the changes in the dielectric constant.