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不同沉积温度下V掺杂的TiN薄膜的结构和性能

             

摘要

Vanadium (V) doped titanium nitride (TiN) films were prepared by the atmospheric pressure chemical vapor deposition process in glass substrates. The effect of the deposition temperature on the structure,morphology,electrical and optical properties of the films were investigated by X-ray diffraction (XRD), optoelectronic spectrometer (XPS), field emission scanning electron microscope (SEM), four point probe and ultraviolet-visible spectrometer. The results showed that the films were typical of granular structure. With increasing deposition temperature,the crystallinity improved,the proportion of V increased and the sheet resistance decreased. When the temperature is 600℃ ,the reflectivity of V doped TiN film in the near -infrared and medium-far infrared region are 50% and 93.74% respectively. We obtained TiN coating glass with both sunlight control function and low radiation function.%利用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备了钒(V)掺杂的氮化钛(TiN)薄膜.利用X射线衍射仪(XRD)、光电子能谱仪(XPS)、扫描电子显微镜(SEM)、四探针电阻仪和分光光度计等对TiN薄膜的结构、形貌、以及光电性能进行了分析.结果表明,薄膜呈典型的粒状结构.随着沉积温度的升高,薄膜的结晶强度不断增加,薄膜中V元素的比例增大,方块电阻逐渐降低.600℃时薄膜在近红外光区的反射率接近50%,在中远红外区的反射率达到93.74%,得到了兼具阳光控制功能和低辐射功能的V掺杂的TiN镀膜玻璃.

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