Plasma Etch of Binary Cr Masks: CD Uniformity Study of Photomasks Utilizing Varying Cr Loads - Part III

摘要

The use of Plasma Etch for the fabrication of Binary Cr Photomasks has become a mainstream staple for advanced Reticle fabrication. These Binary Cr Reticles are suitable for the 0.18 micron technology Nodes and beyond and have forced an appreciation of the varying exposed Cr loads of different Mask layers. Earlier work has demonstrated that by fixing either plasma process conditions or hardware configuration within the plasma reactor, several plasma etch responses are strongly affected, e.g. Cr etch. Cr etch rate, CD Uniformity and global CD Uniformity signature. Recently, a detailed evaluation of the plasma uniformity and hardware configuration and their effect on CDs Uniformity for varying Cr loads has been accomplished. The current work continues this progression, including an optimized hardware configuration suitable for high and low Cr loads, as well as preliminary process optimization.