Enhancing the Performance of Organic Thin-Film Transistor using a Buffer Layer

摘要

Vanadium oxide (V2O5) and 4,4',4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphen ylamine (m-MTDATA) doped V2O5 film, respectively, is used as a buffer layer between source/drain electrodes and organic active layer in organic thin film transistors (OTFTs) to improve the electrical characteristics. Results show that the saturation current, mobility, threshold voltage, and on/off ratio are improved of the proposed OTFT with a buffer layer, especially on/off ratio is about five times than that of the device without a buffer layer.