Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

摘要

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly (methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V_2O_5, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V_2O_5 films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of -40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V_2O_5 buffer layer at a V_(GS) of -60 V. The on/off current ratio reaches 2 × 10~5, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer.