Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

摘要

The IV-characteristics of platinum gate Schottky diodes with an interfacial layer of TaSi_x or Ta depends on gas ambient and they are therefore used as gas sensors, e.g. for combustion engine monitoring. Ideality factors and barrier heights depend on interfacial layers and temperature and are further investigated here. Gas sensitive Schottky diodes on both p- and n-type SiC are shown.