PECVD by hollow cathodes

摘要

Hollow cathodes produce about 2-3 order of magnitude higher plasma density as compared with the conventional electrode systemsat the s ame generation power. High ionization and gas activation efficiency in the hollow cathodes are reflected by very high rates of plasma processing, particularly in Plasma Enhanced CHemical Vapor Deposition (PECVD) of films. Growth rates of Si-N andf a-Si:H films up to even 100 #mu# m/min ewere observed in the PECVD by the radio frequency )RF) hollw cathode. At constant power the growth rate de-pends non-linearly on the mxing ratio of gases in the cathode. Both the mixing ratio and the dilution of the ractive gas in an intert carrier, as well as the type of the carrier gas, the gas flow rate, and the generator power are the parameters which affect distribution of ions and active radicals in the Highly Activated Near Afterglow (HANA) region around the substrate. Possibilities to optimize these parameters for selected PECVD of films are discussed.