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首页> 外文期刊>Plasma processes and polymers >Influence of the applied power on the barrier performance of silicon-containing plasma polymer coatings using a hollow cathode-activated PECVD process
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Influence of the applied power on the barrier performance of silicon-containing plasma polymer coatings using a hollow cathode-activated PECVD process

机译:空心阴极活化PECVD工艺对外加功率对含硅等离子体聚合物涂层阻隔性能的影响

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摘要

A hollow cathode arc discharge is used for the roll-to-roll deposition of silicon-containing plasma polymer thin films on a polymer substrate. It is found that the fragmentation of the used monomer hexamethyldisiloxane (HMDSO) increases with increasing plasma power. The higher fragmentation was related to a reduced hydrogen content as a result of breaking CH bonds. This allowed for a higher degree of cross-linking. The latter has a positive effect on the barrier performance of the coatings. A hollow cathode arc discharge with separate anode allowed the deposition of a plasma polymer with a water vapor transmission rate (WVTR) of 0.16gm(-2)day(-1) (measured at 38 degrees C and 90% r.h.) on a PET substrate while maintaining a deposition rate of approximately 450nmmmin(-1).
机译:中空阴极电弧放电用于在聚合物基板上卷对卷沉积含硅的等离子聚合物薄膜。发现使用的单体六甲基二硅氧烷(HMDSO)的碎片随等离子体功率的增加而增加。较高的断裂与断裂CH键导致氢含量降低有关。这允许更高程度的交联。后者对涂层的阻隔性能具有积极作用。空心阴极电弧放电和单独的阳极允许在水汽传输速率(WVTR)为0.16gm(-2)day(-1)(在38摄氏度和90%相对湿度下测量)的等离子聚合物上沉积同时保持大约450nmmmin(-1)的沉积速率。

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