~1H NMR studies of PECVD a-SiNx: H

摘要

~1H NMR measurements were performed in plasma-chemical-vapor-deposited amorphous hydrogenated silcon nitride (PECVD a-SiN_x:H) films. The spectra were used to analysis the hydrogen content and distribution which were variod with the deposition condition such as substrate temperature (Ts) and radiofrequency (rf) power. The effects of annealing were also discussed.