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ALL EPITAXIAL BaBi_4Ti_4O_(15) - LaNiO_3 HETEROSTRUCTURES

机译:所有外延babi_4ti_4o_(15) - lanio_3异质结构

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摘要

Bismuth-based layer-structured ferroelectric oxides are gaining much attention for ferroelectric thin film applications due to their low fatigue. Epitaxial thin films of these layered ferroelectric oxides grown on epitaxial perovskite-type conducting oxide electrodes such as LaNiO_3 are known to further improve the fatigue resistance. In this paper the ferroelectric properties of BaBi_4Ti_4O_(15) films grown by pulsed laser deposition on epitaxial LaNiO_3/SrTiO_3(l00) and LaNiO_3/YSZ/Si(100) substrates are presented. BaBi_4Ti_4O_(15) thin films with mixed a - and c - orientation exhibit ferroelectric hysteresis loops with a remanent polarization P_r of 2 μC/cm~2 and a coercive field E_c of about 75 kV/cm. The effect of the deposition parameters on thin film orientation, morphology and the ferroelectric properties of BBiT are discussed.
机译:基于铋的层结构铁电氧化物由于其低疲劳而对铁电薄膜应用进行了很多关注。已知已知在外延钙钛矿型导电氧化物电极上生长的这些层状铁电氧化物的外延薄膜,例如LANIO_3,进一步提高疲劳性。本文介绍了通过在外延LANIO_3 / SRTIO_3(L00)和LANIO_3 / YSZ / SI(100)基板上产生的脉冲激光沉积的BABI_4TI_4O_(15)膜的铁电特性。 BABI_4TI_4O_(15)具有混合A和C - 取向的薄膜具有2μC/ cm〜2的反复偏振P_R的铁电磁滞回路,以及约75kV / cm的矫顽磁场E_c。讨论了沉积参数对Bbit薄膜取向,形态和铁电特性的影响。

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