Epitaxial heterostructure based on gallium arsenide with metal-semiconductor contacts

摘要

The proposed useful model relates to microwave technology and can be used as a basic element of generators and receivers of electromagnetic radiation in the microwave and EHF wave ranges. It is an epitaxial structure containing a substrate made of heavily doped (n + -GaAs) gallium arsenide, and an n-type gallium arsenide layer, on the surface of which a metal layer is deposited, which forms one or more rectifying or ohmic contacts in such a way as to form a structure diode. In contrast to the known ones, the proposed structure differs in that between the substrate and n-type gallium arsenide there is an intermediate layer of tin arsenide, a material with a metallic type of conductivity, having a crystal lattice constant close to the lattice constant of gallium arsenide, which avoids the formation of defects. In this case, the n-type gallium arsenide layer is obtained as a result of doping with tin to the required concentration (10 16 -10 17 ) cm -3 . The introduction of an intermediate SnAs layer between the substrate and the epitaxially grown n-GaAs layer significantly expands the functionality of the devices, in particular, the operating frequency range of Schottky diodes, their resistance to burnout, etc.