首页> 外文会议>Solid State Device Research Conference, 1996. ESSDERC '96 >Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation
【24h】

Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation

机译:离子束混合技术对深低掺杂结形成Al掺杂的模拟和实验结果

获取原文

摘要

This paper presents a method for Aluminum inclusion into silicon based on ion mixing. Argon ions are implanted through a Al layer deposited on a silicon substrate. Several experiments consisting in implantation + annealing have been carried out in order to obtain low doped and deep P-N juntions. Besides, since this process has to be optimized, a implantation simulator based on the MonteCarlo method have been developed and coupled with SUPREM-3 simulations for diffusion process study. Results show that it is possible to obtain deep junction with reduced thermal budjet. Doses over 3e15cm-2 can not be used since undesirable effects occur when annealing the impurities.
机译:本文提出了一种基于离子混合法将铝夹杂到硅中的方法。氩离子通过沉积在硅基板上的Al层注入。为了获得低掺杂和深的P-N结,已经进行了包括注入+退火的几个实验。此外,由于必须优化该工艺,因此开发了基于MonteCarlo方法的植入模拟器,并将其与SUPREM-3仿真相结合以进行扩散过程研究。结果表明,可以通过减少热budjet来获得深层结。超过3e15cm -2 的剂量无法使用,因为在对杂质进行退火时会产生不良影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号