FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED BY CLUSTER OR MOLECULAR ION BEAMS

摘要

A process for forming diffused region less than 20 nanometers deep with an average doping dose above 10¹⁴ cm⁻² in an IC substrate, particularly LDD region in an MOS transistor, is disclosed. Dopants are implanted into a source dielectric layer using gas cluster ion beam (GCIB) implantation, molecular ion implantation or atomic ion implantation resulting in negligible damage in the IC substrate. A spike anneal or a laser anneal diffuses the implanted dopants into the IC substrate. The inventive process may also be applied to forming source and drain (S/D) regions. One source dielectric layer may be used for forming both NLDD and PLDD regions.