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Characterization of layered InGaAsP/InP structures by means of time resolved transient grating technique

机译:时间分辨瞬态光栅技术表征层状InGaAsP / InP结构

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Non-equilibrium charge carriers (NCC) dynamics have been investigated by means of transmission and light induced transient grating techniques in the epitaxial layers of InP, InGaAs, InGaAsP. The values of NCC lifetime and ambipolar diffusion coefficient are determined. These parameters are explained in terms of NCC dynamics under the conditions of epi-layer bleaching, free carrier absorption and NCC separation by internal electric field of the heterojunction.
机译:在InP,InGaAs,InGaAsP的外延层中,已经通过传输和光感应瞬态光栅技术研究了非平衡电荷载流子(NCC)动力学。确定NCC寿命和双极性扩散系数的值。这些参数是根据在外延层漂白,自由载流子吸收和通过异质结内部电场进行NCC分离的条件下的NCC动力学进行解释的。

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