In this paper the chemical and thermal properties of electron beam cured photoresist were investigated and compared with conventional thermal curing methods. The photoresist used in this investigation was AZ P.4620, a positive novolak based photoresist formulated for thick film applications. The films were exposed with varying dosages using an electron beam photoresist curing system. The photoresist films were then analyzed for residual solvent content, photoactive compound decomposition, percentage of crosslinking, and film shrinkage as a function of exposure dose. These properties were then compared with the properties of resist films cured using conventional thermal curing methods. A model of photoresist curing chemistry as a function of dose is proposed as well as a method for optimizing the cure of the photoresist for different applications.
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