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Chemical analysis of electron beam curing of positive photoresist

机译:正性光刻胶电子束固化的化学分析

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Abstract: In this paper the chemical and thermal properties of electron beam cured photoresist were investigated and compared with conventional thermal curing methods. The photoresist used in this investigation was AZ P.4620, a positive novolak based photoresist formulated for thick film applications. The films were exposed with varying dosages using an electron beam photoresist curing system. The photoresist films were then analyzed for residual solvent content, photoactive compound decomposition, percentage of crosslinking, and film shrinkage as a function of exposure dose. These properties were then compared with the properties of resist films cured using conventional thermal curing methods. A model of photoresist curing chemistry as a function of dose is proposed as well as a method for optimizing the cure of the photoresist for different applications. !23
机译:摘要:本文研究了电子束固化光致抗蚀剂的化学和热学性质,并将其与常规热固化方法进行了比较。本研究中使用的光刻胶为AZ P.4620,这是一种正酚醛清漆型正光刻胶,专为厚膜应用而配制。使用电子束光致抗蚀剂固化系统以不同的剂量对膜进行曝光。然后分析光致抗蚀剂膜的残留溶剂含量,光活性化合物分解,交联百分数和膜收缩率与曝光剂量的关系。然后将这些性能与使用常规热固化方法固化的抗蚀剂膜的性能进行比较。提出了作为剂量函数的光致抗蚀剂固化化学模型,以及针对不同应用优化光致抗蚀剂固化的方法。 !23

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