Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination

摘要

The effect of fluorination on the bulk oxide traps in poly-Si/SiO2/Si capacitors was studied using charge injection techniques. A substantial reduction of the density of both electron and hole traps was observed after fluorine implantation into the gate. The process of trap elimination was found to be dependent on the presence of hydrogen in the oxide, suggesting the involvement of some mobile species, e.g. HF.