Simulation and Experimental Study of Zn Outdiffusion During Epitaxial Growth of a Double Heterostructure Bipolar Transistor Structure

机译：双异质结构双极晶体管结构外延生长过程中锌扩散的模拟和实验研究

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A model is developed describing Zn outdiffusion during epitaxial growth of a Double Heterostructure Bipolar Transistor (DHBT) structure. This model is used for the design of the highly p-doped base layer. Experimental results confirm the calculated doping profiles.

机译：开发了描述双异质结构双极晶体管（DHBT）结构外延生长期间Zn扩散的模型。该模型用于高度p掺杂的基础层的设计。实验结果证实了计算出的掺杂分布。

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《Solid State Device Research Conference, 1991. ESSDERC '91》|1991年|149-152|共4页
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Paraskevopoulos A.; Weber R.; Harde P.; Schroeter-JanBen H.;
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Simulation and Experimental Study of Zn Outdiffusion During Epitaxial Growth of a Double Heterostructure Bipolar Transistor Structure

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