Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

摘要

The dc performances of an interesting InP/InGaAs tunneling-emitter bipolar transistor (TEBT) with double heterostructures are studied and demonstrated. The studied device has a higher breakdown voltage than conventional InP single heterojunction bipolar transistors between the collector and base. The base-collector junction breakdown voltage V_(BR) up to 15.6 V is obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Furthermore, low variations of dc current gains are found as the temperature is increased from 25 to 175 ℃. The elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents (η_C and η_B) are obtained due to the use of a δ-doping sheet and spacer layer. In addition, the studied TEBT device has a stable dc current gain distributed regime as the temperature is increased from 25 to 175℃.