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Cmparative study of structural properties and photoluminescence in InGaN layers with a high In content

机译:含量高含铂层中结构性能和光致发光的比较研究

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Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grwon InGaN layers. The PL peak energy and In content (mesuremd by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40
机译:Rutherford反向散射和通道光谱(RBS),光致发光(PL)光谱和透射电子显微镜(TEM)用于研究MOCVD GWON INGAN层中的宏观和微观偏析。将PL峰值能量和含量(rbs的Mesuremd)映射在样品上的大量不同点。铟浓度为40

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