Indium content determination related with structural and optical properties of InGaN layers

S.Pereira; M.R.Correia; T.Monteiro

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Indium content determination related with structural and optical properties of InGaN layers

机译：与InGaN层的结构和光学性质相关的铟含量测定

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摘要

We studied the structural and optical properties of a set of nominally undoped epitaxial single layers of In_xGa_1-xN (0

机译：我们研究了通过MOCVD在GaN / Al_2O_3衬底上生长的一组名义上未掺杂的In_xGa_1-xN（0

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来源
《Journal of Crystal Growth》 |2001年第4期|p.448-453|共6页
作者
S.Pereira; M.R.Correia; T.Monteiro;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Rutherford backscatterign; A1.Solid solutions; A1.X-ray diffraction;

机译：A1。卢瑟福后向散射;A1。固溶体;A1.X射线衍射;

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专利

1. Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition [J] . Prabakaran K., Ramesh R., Arivazhagan P., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

机译：金属有机化学气相沉积种植铟流量铟流量对InGaN层结构，形态学，光学和电性能的影响
2. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness [J] . J. Yang, D. G. Zhao, D. S. Jiang, Journal of Applied Physics . 2015,第5期

机译：GaN盖层厚度不同的高铟含量InGaN / GaN多量子阱的光学和结构特征
3. Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD [J] . Jianxun Liu, Xiaochuan Xia, Qasim Abbas Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2018,第期

机译：MOCVD生长的高铟含量INGAN的异常铟掺入和光学性质
4. The optical and structural properties of InGaN epilayers with very high indium content [C] . S.C.Bayliss, P.Demeester, I.Fletcher, Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

机译：具有非常高铟含量的IngaN癫痫的光学和结构性能
5. Fabrication of Si/InGaN Heterojunction Solar Cells by RF Sputtering Method: Improved Electrical and Optical Properties of Indium Gallium Nitride (InGaN) Thin Films [D] . Jakkala, Pratheesh Kumar 2017

机译：RF溅射法制备Si / Ingan异质结太阳能电池：改进氮化铟镓（IngaN）薄膜的电气和光学性能
6. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells [O] . George Christian, Menno Kappers, Fabien Massabuau, 2018

机译：掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
7. Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition [O] . Han XX, Chen Z, Li DB, 2004

机译：金属有机化学气相沉积法制备3D生长多层InGaN / GaN量子点的结构和光学性质
8. Optical spectroscopy of InGaN epilayers in the low indium composition regime [R] . Crawford, M. H. , Han, J. , Banas, M. A. , 2000

机译：低铟组分体系中InGaN外延层的光学光谱

Indium content determination related with structural and optical properties of InGaN layers

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