A dual cathode magnbetron sputtering system was used for synthesising carbon-nitride (CN) and boron-carbon-nitide (BCN) films at a nitrogen gas pressure of 2.0 Pa onto Si and NaCl substrates. The stocihiometry and thickness of the films were measured with Rutherford backscattring. The results were analysed with the SImulated annealing algorithm, which allowed the determination of the B content in samples with as little as 15 at.
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