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RBS/Simulated annealing and FTIR characterisation of BCN films deposited by dual cathode magnetron sputtering

机译:双阴极磁控溅射沉积BCN膜的RBS /模拟退火和FTIR表征

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A dual cathode magnbetron sputtering system was used for synthesising carbon-nitride (CN) and boron-carbon-nitide (BCN) films at a nitrogen gas pressure of 2.0 Pa onto Si and NaCl substrates. The stocihiometry and thickness of the films were measured with Rutherford backscattring. The results were analysed with the SImulated annealing algorithm, which allowed the determination of the B content in samples with as little as 15 at.
机译:使用双阴极magnbetron溅射系统在2.0 Pa的氮气压力下将氮化碳(CN)和氮化硼碳(BCN)膜合成到Si和NaCl衬底上。用卢瑟福反划痕法测量薄膜的化学计量学和厚度。使用模拟退火算法对结果进行了分析,该算法可以测定低至15 at的样品中的B含量。

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