Design Features and Performance Evaluation of the First 6.5kV/1200A Trench Gate IGBT Module

摘要

This paper reports for the first time, the design features and performace of the first 6.5kV/1200A IGBT module. Large IGBT and FRD chip sizes and new shrunk VLD termination has been used to increase the nominal operating current and achieve low IGBT Vce(sat) of 3.3V/3.8V at 25deg C/125deg C respectively. In addition, it is shown that a newly developed Gen3 TTO(Terrace Trench Oxide) IGBT technology minimises increase in capacitance and gate charge as chip area increases. The TTO technology features assymetric oxide active trenches in addition to several dummy trenches with thick oxide linning. It is shown that the dummy trenches can either be floating or connected to emitter potential in different configurations to achieve desired Eon and turn-on dI/dt. The new 6.5kV/1200A performance show that it is possible to further increase the power density of 6.5kV modules in the 190mmx140mm outline and achieve higher IGBT RBSOA with only moderate increase in dynamic losses