Turn-off performance evaluations of trench-gate IGBT under soft switching

Iwamoto H.; Kawakami A.

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Turn-off performance evaluations of trench-gate IGBT under soft switching

机译：沟槽栅IGBT在软开关下的关断性能评估

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Turn-off performance evaluations of trench-gate insulated gate bipolar transistors (IGBTs) under a zero voltage soft switching commutation scheme are presented. It is noted that the developed trench-gate IGBT has lower turn-off power losses due to soft switching in addition to having a low conduction loss.

机译：提出了在零电压软开关换向方案下的沟槽栅绝缘栅双极型晶体管（IGBT）的关断性能评估。值得注意的是，除了具有低传导损耗之外，由于软开关，开发的沟槽栅IGBT具有更低的关断功率损耗。

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《Electronics Letters》 |2000年第10期|P.915-916|共2页
作者
Iwamoto H.; Kawakami A.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. Turn-off behaviour of epitaxial planar and trench gate IGBTs and nonepitaxial planar gate IGBT under hard and soft switchings [J] . H. Iwamoto, H. Kondo, Y.Yu IEE Proceedings. Part B . 2001,第5期

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3. Comparative performance evaluations of IGBTs and MCT incorporated into voltage-source-type single-ended quasi-resonant zero-voltage soft switching inverter [J] . Haruo Terai, Izuo Hirota, Takahiro Miyauchi, Electrical engineering in Japan . 2003,第3期

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4. An investigation of turn-off performance of planar and trench gate IGBTs under soft and hard switching [C] . Iwamoto, H., Kondo, Industry Applications Conference, 2000. Conference Record of the 2000 IEEE . 2000

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Turn-off performance evaluations of trench-gate IGBT under soft switching

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