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Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation

机译：质子辐照改进PT-IGBT的关断开关特性

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Sung-Hwan Choi; Yong-Hyun Lee; Young-Kyu Kwon; Young-Ho Bae;
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年度 2006
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1. Local lifetime control IGBT structures f turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs [J] . S. Azzopardi, A. Kawamura, H. Iwamoto Microelectronics & Reliability . 2001,第9a10期

机译：本地寿命控制IGBT结构在1200V沟槽与新型平面PT-IGBT之间进行硬和软切换时的关断性能比较
2. Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors [J] . Peng Dong, Yingxin Cui, Zhe Chen, IEEE Transactions on Electron Devices . 2019,第9期

机译：中子辐照对高压4H-SiC p型栅极截止晶闸管的静态和开关特性的影响
3. Efficiency Improvement for a DC-DC Quadratic Power Boost Converter by Applying a Switch Turn-off Lossless Snubber Structure Based on Zero Voltage Switching [J] . Ghaderi Davood, Celebi Mehmet, Minaz Mehmet Recep, Elektronika ir Elektrotechnika . 2018,第3期

机译：通过基于零电压切换的开关关断无损缓冲器结构来实现DC-DC二次功率升压转换器的效率改进
4. Ultra high switching speed 600 V thin wafer PT-IGBT based on new turn-off mechanism [C] . Matsudai T., Nakagawa A. Computers and Communications, 2005. ISCC 2005. . 2005

机译：基于新型关断机制的超高开关速度600 V薄晶圆PT-IGBT
5. Isolation of the role of radiation-induced segregation in irradiation-assisted stress corrosion cracking of proton-irradiated austenitic stainless steels. [D] . Busby, Jeremy Todd. 2001

机译：隔离辐射诱发的偏析在质子辐照奥氏体不锈钢的辐照辅助应力腐蚀开裂中的作用。
6. Characteristics of Protons Exiting from a Polyethylene Converter Irradiated by Neutrons with Energies between 1 keV and 10 MeV [O] . D. Nikezic, Mehrdad Shahmohammadi Beni, D. Krstic, -1

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7. INVESTIGATION OF THE SWITCHING AND CARRIER RECOMBINATION CHARACTERISTICS IN THE PROTON IRRADIATED AND THERMALLY ANNEALED Si PIN DIODES [O] . A. Uleckas, E. Gaubas, J. Pavlovas, 2010

机译：质子辐照和热退火si pIN二极管开关和载流子重组特性的研究

Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation

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