Local lifetime control IGBT structures f turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs

摘要

More expensive than the gold/Platinum diffusion and the electron irradiation processes, the local lifetime control process using proton irradiation allows improving relatively well the devices performances. Applied to IGBTs, this process can minimize the magnitude of the current tail during turn-off when the temperature increases. The goal of the local lifetime control is to minimize the rise of the gain of the PNP bipolar transistor as well as the rise of the minority carrier lifetime. To evaluate the efficiency of that process, the following study presents a comparative analysis of turn-off switching performances for hard- and soft-switching at high temperature of 1200V new types of IGBT. In order to give an overview of the local lifetime control process effect, both trench and new planar IGBTs performances have been investigated at high temperature and compared to conventional planar IGBT using global lifetime control. Current and voltage waveforms and turn-off switching losses are analyzed. Results show that the local lifetime control process is very efficient under hard-switching and zero-voltage switching, but this is not the case under zero-current switching, especially for the new planar IGBT.