Solution based indium zinc oxide thin film transistor with diffused aluminum oxide insulator layer

摘要

This paper introduces solution-processed Aluminum Oxide (AlO_x) diffusion layer induced Indium Zinc Oxide (IZO) Thin Film Transistors(TFTs). We fixed IZO solution molar ratio, In : Zn = 3 : 2 and vary mole concentration of AlO_x solution. We control the oxygen vacancies of IZO film using the tendency of Aluminum, capturing the oxygen vacancies and making the strong bond with oxygen atoms. Consequently, solution-processed IZO TFTs with Aluminum oxide diffusion layer showed improved device characteristics such stability and performance.