Mobility model of polysilicon thin-film transistor (poly-Si TFT)

摘要

We propose a simple mobility model which includes lattice, crystal imperfection and grain-boundary scattering mechanisms. An empirical expression were developed for each mechanism and related to experimentally measured quantities. We studied the effect of grain size over a wide temperature range to evaluate the effective carrier mobility due to different scattering mobility. The model was found to account correctly for the experimentally observed variation and yield a reasonable good agreement.