Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)

摘要

High field effect mobility thin film transistors find udimmense application in active matrix liquid crystal uddisplay (AMLCD) or active matrix organic light emitting diode (AMOLED) displays [1], [2].udAmorphous silicon is easily deposited over large areas at low deposition temperatures (below 450°C) but it suffers degradation under bias stress and under illumination.