InGaAs/GaAs Ring-Like Nanostructures Grown by Droplet Epitaxy Using Molecular Beam Epitaxy

摘要

Self-assembled InGaAs ring-shape nanostructures on GaAs were fabricated by droplet-epitaxy technique. Depenence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. Photoluminescence results confirmed the high quality of nanocrystal.